Product Summary

The L35NF10 is a Power MOSFET. The resulting transistor shows extremely low on-resistance and minimal gate charge. The new PowerFLAT package allows a significant reduction in board space without compromising performance. The L35NF10 is suitable for high efficiency isolated dc/dc conveters.

Parametrics

L35NF10 absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS = 0): 100 V; (2)VDGR, Drain-gate Voltage: 100 V; (3)VGS, Gate- source Voltage: ± 20 V; (4)ID, Drain Curren: 35A; (5)IDM, Drain Current (pulsed): 140 A; (6)PTOT, Total Dissipation: 80 W; (7)Derating Factor: 0.64 W/℃; (8)EAS, Single Pulse Avalanche Energy: 135 mJ; (9)Tstg, Storage Temperature: –65 to 150℃; (10)Tj, Max. Operating Junction Temperature: –55 to 150℃.

Features

L35NF10 features: (1)typical RDS(on) = 0.025Ω; (2)improved die-to-footprint ratio; (3)very low profile package.

Diagrams

L35NF10 block diagram